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Physics of palladium metal-oxide-semiconductor devices
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
1983 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

This thesis Palladium gate metal-oxide-semiconductor (PdMOS) devices are used as hydrogen sensors. It is shown that the sensitivity is only partly due to the change of the effective work function of the Pd gate on hydrogen adsorption. Sodium ion drift experiments have shown that hydrogen-sodium interactions occur in PdMOS devices. Hydrogen ions adsorb in the first atomic layers of the silicon dioxide. This is the origin of an instability problem called hydrogen induced drift (HID). The HID can be avoided by the insertion of another insulating material (alumina, silicon nitride or tantalum pentoxide) between the silicon dioxide and the metal gate.

A hydrogen induced deterioration of the Pd gate metal has been observed. Blisters in the gate metal are formed due to a hydrogen induced stress in the film. A solution to this problem has been found.

The catalytic properties of palladium and platinum gate metals are compared in different hydrogen/oxygen mixtures. PdMOS devices are superior for detection of low hydrogen concentrations, whereas PtMOS devices are more suitable at higher concentrations. High frequency capacitance-voltage measurements have shown that hydrogen induced oxide surface charging occurs in PdMOS devices. It is concluded that the surface charges are protons

Place, publisher, year, edition, pages
Linköping: Linköpings universitet , 1983. , p. 29
Series
Linköping Studies in Science and Technology. Dissertations, ISSN 0345-7524 ; 107
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-143498ISBN: 9173727326 (print)OAI: oai:DiVA.org:liu-143498DiVA, id: diva2:1164268
Public defence
1984-01-31, BDL 6, Campus Valla, Linköping, 10:15 (English)
Available from: 2017-12-11 Created: 2017-12-11 Last updated: 2018-01-09Bibliographically approved

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CiteExportLink to record
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  • apa
  • harvard1
  • ieee
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  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
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  • asciidoc
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