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Spectroscopic studies of irradiation induced defects in SiC
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
2003 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

Silicon carbide (SiC) with its applications has the potential to affect the everyday life of most citizens. As a material it has some outstanding properties concerning its mechanical and chemical toughness as well as its electrical properties for high power and high frequency applications. The main effect this will have on the society is large reductions of electrical energy losses in base stations for mobile communication, electrical power distribution, power adaptors for home electronics and several other applications. To realize this marvelous potential SiC has to move beyond its present state as an emerging semiconductor into a mature technology. On this path the processing of devices is one of the major steps, this includes ion-implantation where ions bombard the SiC to form regions with different electrical properties. The effect of ion-implantation and irradiation with other particles, which causes similar damage, have been studied and reported in the following seven papers. Paper I deals with a well-known defect labeled D1, which occurs after irradiation and subsequent high temperature annealing. We have found a correlation with an electrically measured defect HS 1 and the proposed pseudodonor model is confirmed for this defect. In paper II the same defect is studied but with a novel method named TraCE that combines the electrical and optical measurements and provides a direct correlation between the two techniques. Further effects of irradiation and the D1 defect are presented in paper III. The lifetime of carriers is one of the major parameters when producing devices for high power applications. The influence of irradiation dose and concentrations of the D1 defect on the carrier lifetime is reported. There is a second defect that occurs after high temperature annealing named DII" It requires implantation of ions to form unlike the DI where any kind irradiation causing lattice damage is sufficient. It has some very interesting properties, especially the high-energy local vibrational modes. These are unique to the Dn defect and are important for the validation of theoretical calculations. A detailed study of the properties of the Dn defect is presented in paper IV. SiC is a compound semiconductor with two sublattices consisting of silicon (Si) and carbon (C) in equal amounts. Depending on the orientation one sublattice will always be above and dose to the other. The direction of irradiation, a Si above C or vice versa, for electrons having an energy of 100-200keV will create different defects and their concentration will differ. The difference in defect introduction rates is presented in paper V and the effects it has on photoluminescence spectra is presented in paper VI. Since SiC is a very inert material, defects created usually requires temperatures from 500-2000°C to anneal and some defects do not disappear. In paper VII the defect reduction of the electrically measured HS2 defect and some of the alphabet lines measured by photoluminescence is observed. This occurs at room temperature with only the recombination energy of the induced electrons and holes unlike other cases where high temperatures are needed.

Place, publisher, year, edition, pages
Linköping: Linköpings universitet , 2003. , p. 86
Series
Linköping Studies in Science and Technology. Dissertations, ISSN 0345-7524 ; 803
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-143571ISBN: 9173736090 (print)OAI: oai:DiVA.org:liu-143571DiVA: diva2:1164947
Public defence
2003-03-28, J206 (Planck), Campus Valla, Linköping, 10:15 (English)
Opponent
Available from: 2017-12-13 Created: 2017-12-12 Last updated: 2018-01-17Bibliographically approved

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CiteExportLink to record
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  • apa
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