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Metal-dielectric transition in Sn-intercalated graphene on SiC(0001)
Cardiff University, Wales; Lund University, Sweden.
Cardiff University, Wales.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
2017 (English)In: Ultramicroscopy, ISSN 0304-3991, E-ISSN 1879-2723, Vol. 183, p. 49-54Article in journal (Refereed) Published
Abstract [en]

The Sn intercalation into a buffer layer graphene grown on 4H-SiC(0001) substrate has been studied with spectroscopic photoemission and low energy electron microscope. Both SnSix and SnOx interfacial layers are found to form below the buffer layer, converting it into a quasi-free-standing monolayer graphene. Combining the various operation modes of the microscope allows a detailed insight into the formation processes of the interlayers and their thermal stability. In particular, at the interface we observed a reversible transition from silicide to oxide after exposure to ambient pressure and subsequent annealing. This metal-dielectric transition might be useful for interface engineering in graphene-based devices. (C) 2017 Elsevier B.V. All rights reserved.

Place, publisher, year, edition, pages
ELSEVIER SCIENCE BV , 2017. Vol. 183, p. 49-54
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-143630DOI: 10.1016/j.ultramic.2017.05.010ISI: 000415578200009PubMedID: 28527595OAI: oai:DiVA.org:liu-143630DiVA, id: diva2:1165570
Conference
10th International Workshop on Low Energy Electron Microscopy and Photoemission Electron Microscopy (LEEM/PEEM)
Available from: 2017-12-13 Created: 2017-12-13 Last updated: 2017-12-13

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