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2-D Drift-Diffusion Simulation of Organic Electrochemical Transistors
Linköping University, Department of Physics, Chemistry and Biology, Surface Physics and Chemistry. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Electrical Engineering, Information Coding. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Electrical Engineering, Information Coding. Linköping University, Faculty of Science & Engineering.
2017 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 64, no 12, p. 5114-5120Article in journal (Refereed) Published
Abstract [en]

A 2-D device model of the organic electrochemical transistor is described and validated. Devices with channel length in range 100 nm-10 mm and channel thickness in range 50 nm-5 mu m are modeled. Steady-state, transient, and AC simulations are presented. Using the realistic values of physical parameters, the results are in good agreement with the experiments. The scaling of transconductance, bulk capacitance, and transient responses with device dimensions is well reproduced. The model reveals the important role of the electrical double layers in the channel, and the limitations of device scaling.

Place, publisher, year, edition, pages
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC , 2017. Vol. 64, no 12, p. 5114-5120
Keywords [en]
Device modeling; drift-diffusion model; electric double layer; organic electrochemical transistor (OECT); PEDOT: PSS
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-143918DOI: 10.1109/TED.2017.2757766ISI: 000417727500043OAI: oai:DiVA.org:liu-143918DiVA, id: diva2:1170023
Note

Funding Agencies|Swedish Foundation for Strategic Research through the project SiOS; Swedish Foundation for Strategic Research through the project Large Area Light-Emission on the Roll; MODULIT Project through the Batterifonden Programme of the Swedish Energy Agency

Available from: 2018-01-02 Created: 2018-01-02 Last updated: 2018-01-02

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