Unprecedented Thermoelectric Power Factor in SiGe Nanowires Field-Effect TransistorsShow others and affiliations
2017 (English)In: ECS Journal of Solid State Science and Technology, ISSN 2162-8769, E-ISSN 2162-8777, Vol. 6, no 9, p. Q114-Q119Article in journal (Refereed) Published
Abstract [en]
In this work, a novel CMOS compatible process for Si-based materials has been presented to form SiGe nanowires (NWs) on SiGe On Insulator (SGOI) wafers with unprecedented thermoelectric (TE) power factor (PF). The TE properties of SiGe NWs were characterized in a back-gate configuration and a physical model was applied to explain the experimental data. The carrier transport in NWs was modified by biasing voltage to the gate at different temperatures. The PF of SiGe NWs was enhanced by a factor of amp;gt; 2 in comparison with bulk SiGe over the temperature range of 273 K to 450 K. This enhancement is mainly attributed to the energy filtering of carriers in SiGe NWs, which were introduced by imperfections and defects created during condensation process to form SiGe layer or in NWs during the processing of NWs. (c) 2017 The Electrochemical Society. All rights reserved.
Place, publisher, year, edition, pages
ELECTROCHEMICAL SOC INC , 2017. Vol. 6, no 9, p. Q114-Q119
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:liu:diva-144169DOI: 10.1149/2.0021710jssISI: 000418363500019OAI: oai:DiVA.org:liu-144169DiVA, id: diva2:1171614
Note
Funding Agencies|Swedish Foundation for Strategic Research [EM-011-0002]; Swedish Energy Agency [43521-1]; Knut and Alice Wallenberg Foundation
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