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Growth, Defects and Doping of 3C-SiC on Hexagonal Polytypes
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0003-1000-0437
University of Oslo, Norway.
KTH Royal Institute Technology, Sweden.
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2017 (English)In: ECS Journal of Solid State Science and Technology, ISSN 2162-8769, E-ISSN 2162-8777, Vol. 6, no 10, p. P741-P745Article in journal (Refereed) Published
Abstract [en]

Technologies for the growth of 3C-SiC with crystalline quality and crystal size similar to hexagonal counterparts (6H- or 4H-SiC) are still at the laboratory stage. There are several challenges in the control of polytype stability and formation of structural defects which have to be eliminated to reveal the full potential of this material. Nevertheless, 3C-SiC has been explored for various energy, environment and biomedical applications which significantly benefit from the intrinsic semiconductor properties of this material. The future of 3C-SiC and its applications depends on the advances which will be made in improving crystalline quality, enlarging crystal size and controlling doping levels which have not been entirely explored due to the lack of high quality 3C-SiC substrates. This paper reviews recent progress in growth and doping of thick 3C-SiC layers on hexagonal SiC substrates using sublimation epitaxy. It covers the growth process on off-axis substrates and defects occurrence, as well as the issue of obtaining high resistivity material. (c) 2017 The Electrochemical Society. All rights reserved.

Place, publisher, year, edition, pages
ELECTROCHEMICAL SOC INC , 2017. Vol. 6, no 10, p. P741-P745
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:liu:diva-144168DOI: 10.1149/2.0281710jssISI: 000418367600027OAI: oai:DiVA.org:liu-144168DiVA: diva2:1171624
Note

Funding Agencies|Swedish Research Council [621-2014-5825]; AForsk foundation [16-576]; EU [720827]

Available from: 2018-01-08 Created: 2018-01-08 Last updated: 2018-01-19Bibliographically approved

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Yakimova, RositsaGueorguiev Ivanov, IvanGällström, AndreasSyväjärvi, MikaelJokubavicius, Valdas
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Semiconductor MaterialsFaculty of Science & Engineering
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