liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Cubic boron phosphide epitaxy on zirconium diboride
Kansas State University, KS 66506 USA.
Kansas State University, KS 66506 USA.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
Show others and affiliations
2018 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 483, p. 115-120Article in journal (Refereed) Published
Abstract [en]

Cubic boron phosphide (BP) is one of the least studied III-V compound semiconductors, in part because it is difficult to prepare in high quality form. In this study, zirconium diboride (ZrB2) was studied as a potential substrate for BP epitaxial layers, because of its advantages of a low lattice constant mismatch and high thermal stability. Two types of substrates were considered: ZrB2(0001) epitaxial films on 4H-SiC (0001) and bulk ZrB2(0001) single crystals. The optimal temperature for epitaxy on these substrates was 1100 degrees C; higher and lower temperatures resulted in polycrystalline films. The BP film/ZrB2 interface was abrupt as confirmed by cross-sectional transmission electron microscopy, attesting to the stability of ZrB2 under BP deposition conditions. The BP films were under compressive and tensile strain on ZrB2 and ZrB2/4H-SiC substrates, respectively, as determined by Raman spectroscopy, due to differences in the substrate/film coefficients of thermal expansion. This study suggests that with further optimization, ZrB2 can be an excellent substrate for BP epitaxial films. (C) 2017 Elsevier B.V. All rights reserved.

Place, publisher, year, edition, pages
ELSEVIER SCIENCE BV , 2018. Vol. 483, p. 115-120
Keyword [en]
Crystal morphology; Defects; Substrates; Chemical vapor deposition processes; Semiconducting III-V materials
National Category
Inorganic Chemistry
Identifiers
URN: urn:nbn:se:liu:diva-144241DOI: 10.1016/j.jcrysgro.2017.11.014ISI: 000419025800016OAI: oai:DiVA.org:liu-144241DiVA: diva2:1173648
Note

Funding Agencies|Department of Energy [GEGF001846]; Swedish Research Council (VR) [621-2010-3921]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [2009-00971]

Available from: 2018-01-12 Created: 2018-01-12 Last updated: 2018-02-05

Open Access in DiVA

The full text will be freely available from 2019-11-13 17:34
Available from 2019-11-13 17:34

Other links

Publisher's full text

Search in DiVA

By author/editor
Tengdelius, LinaLu, JunHögberg, Hans
By organisation
Thin Film PhysicsFaculty of Science & Engineering
In the same journal
Journal of Crystal Growth
Inorganic Chemistry

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 53 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf