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Growth, Defects and Doping of 3C-SiC on Hexagonal Polytypes
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0003-1000-0437
Univ Oslo, Norway.
KTH Royal Inst Technol, Sweden.
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2017 (English)In: GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 7, ELECTROCHEMICAL SOC INC , 2017, Vol. 80, no 7, p. 107-115Conference paper, Published paper (Refereed)
Abstract [en]

Technologies for the growth of 3C-SiC with crystalline quality and crystal size similar to hexagonal counterparts (6H-or 4H-SiC) are still at the laboratory stage. There are several challenges in the control of polytype stability and formation of structural defects which have to be eliminated to reveal the full potential of this material. Nevertheless, 3C-SiC has been explored for various energy, environment and biomedical applications which significantly benefit from the intrinsic semiconductor properties of this material. The future of 3C-SiC and its applications depends on the advances which will be made in improving crystalline quality, enlarging crystal size and controlling doping levels which have not been entirely explored due to the lack of high quality 3C-SiC substrates. This paper reviews recent progress in growth and doping of thick 3C-SiC layers on hexagonal SiC substrates using sublimation epitaxy. It covers the growth process on off-axis substrates and defects occurrence, as well as the issue of obtaining high resistivity material.

Place, publisher, year, edition, pages
ELECTROCHEMICAL SOC INC , 2017. Vol. 80, no 7, p. 107-115
Series
ECS Transactions, ISSN 1938-5862
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-145846DOI: 10.1149/08007.0107ecstISI: 000425017700009ISBN: 978-1-62332-476-6 (print)ISBN: 978-1-60768-824-2 (electronic)OAI: oai:DiVA.org:liu-145846DiVA, id: diva2:1192150
Conference
Symposium on Gallium Nitride and Silicon Carbide Power Technologies held during the 232nd Meeting of The Electrochemical-Society
Note

Funding Agencies|Swedish Research Council [621-2014-5825]; AForsk foundation [16-576]; EU project CHALLENGE [720827]

Available from: 2018-03-21 Created: 2018-03-21 Last updated: 2018-03-21

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Yakimova, RositsaIvanov, Ivan GueorguievGällström, AndreasSyväjärvi, MikaelJokubavicius, Valdas
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