It is widely known that ethylene treatment is an effective method for postharvest handling of fruit. In this study, we employed a field effect transistor based on silicon carbide (SiC-FET) gas sensor for detecting ethylene produced from fruits. The characteristics of the sensor was evaluated regarding several parameters. The selectivity and sensitivity of SiC-FET sensors can be controlled toward a few target gases by changing the operating temperature, gate material and material structure. We studied an iridium and a platinum gated SiC-FET sensors and characterized the sensing of these for different ethylene concentrations as the target gas at different operating temperatures. The results showed that the iridium gated SiC-FET sensor has high sensitivity to ethylene, and the highest response is achieved at 200 degrees C.