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Quantum Properties of Dichroic Silicon Vacancies in Silicon Carbide
Univ Stuttgart, Germany.
Univ Stuttgart, Germany.
Univ Stuttgart, Germany.
Univ Stuttgart, Germany.
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2018 (English)In: Physical Review Applied, E-ISSN 2331-7019, Vol. 9, no 3, article id 034022Article in journal (Refereed) Published
Abstract [en]

Although various defect centers have displayed promise as either quantum sensors, single photon emitters, or light-matter interfaces, the search for an ideal defect with multifunctional ability remains open. In this spirit, we study the dichroic silicon vacancies in silicon carbide that feature two well-distinguishable zero-phonon lines and analyze the quantum properties in their optical emission and spin control. We demonstrate that this center combines 40% optical emission into the zero-phonon lines showing the contrasting difference in optical properties with varying temperature and polarization, and a 100% increase in the fluorescence intensity upon the spin resonance, and long spin coherence time of their spin-3/2 ground states up to 0.6 ms. These results single out this defect center as a promising system for spin-based quantum technologies.

Place, publisher, year, edition, pages
2018. Vol. 9, no 3, article id 034022
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Physical Sciences
Identifiers
URN: urn:nbn:se:liu:diva-147280DOI: 10.1103/PhysRevApplied.9.034022ISI: 000428168800003OAI: oai:DiVA.org:liu-147280DiVA, id: diva2:1197393
Available from: 2018-04-12 Created: 2018-04-12 Last updated: 2018-04-24

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Nguyen, Son TienIvanov, Ivan Gueorguiev

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