This thesis investigates structural defects into Silicon Carbide (SiC) in processed Al and B ion implantated samples. Ion implantation is currently the preferred way to introduce impurity atoms into the SiC crystal lattice. The structural defects found was concluded to be extrinsic dislocation loops composed of excess Si interstitials. A model for these loops was developed and the mechanisms for loop evolution during processing were identified. The results of this thesis contributes to an improved processing technology of SiC as a semiconducting material, which will be used in electrical components for high power, high temperature and high frequency applications.