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Electron microscopy of ion implanted silicon carbide
Linköping University, Department of Physics, Measurement Technology, Biology and Chemistry. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-9140-6724
2000 (English)Licentiate thesis, comprehensive summary (Other academic)
Abstract [en]

This thesis investigates structural defects into Silicon Carbide (SiC) in processed Al and B ion implantated samples. Ion implantation is currently the preferred way to introduce impurity atoms into the SiC crystal lattice. The structural defects found was concluded to be extrinsic dislocation loops composed of excess Si interstitials. A model for these loops was developed and the mechanisms for loop evolution during processing were identified. The results of this thesis contributes to an improved processing technology of SiC as a semiconducting material, which will be used in electrical components for high power, high temperature and high frequency applications.

Place, publisher, year, edition, pages
Linköping: Linköpings universitet , 2000. , p. 46
Series
Linköping Studies in Science and Technology. Thesis, ISSN 0280-7971 ; 813
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-145911Local ID: LiU-TEK-LIC-2000:09ISBN: 9172196858 (print)OAI: oai:DiVA.org:liu-145911DiVA, id: diva2:1200196
Available from: 2018-04-23 Created: 2018-04-23 Last updated: 2018-11-27Bibliographically approved

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Persson, Per

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