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Site-Controlled Growth of GaN Nanorods with Inserted InGaN Quantum Wells on mu-Cone Patterned Sapphire Substrates by Plasma-Assisted MBE
Ioffe Inst, Russia.
Ioffe Inst, Russia.
Ioffe Inst, Russia.
Ioffe Inst, Russia.
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2018 (English)In: Semiconductors (Woodbury, N.Y.), ISSN 1063-7826, E-ISSN 1090-6479, Vol. 52, no 5, p. 667-670Article in journal (Refereed) Published
Abstract [en]

We report on a new approach to fabricate regular arrays of GaN nanorods (NRs) with InGaN QWs by plasma-assisted molecular-beam epitaxy (PA MBE) on micro-cone patterned sapphire substrates (mu-CPSSs). A two-stage PA MBE fabrication process of GaN NRs has been developed, starting with a high temperature nucleation layer growth at metal-rich conditions to aggregate selectively GaN nucleus on c-oriented areas of the mu-CPSSs and followed by growth of 1-mu m-thick GaN NRs at strongly nitrogen-rich conditions exactly on the cone tips. These results are explained by energetically favorable GaN growth on the (000 (1) over bar) oriented sapphire surface. Both micro-photoluminescence and micro-cathodoluminescence confirm the formation of regular array of optically and spectrally isolated NRs without usage of any nanolithography.

Place, publisher, year, edition, pages
MAIK NAUKA/INTERPERIODICA/SPRINGER , 2018. Vol. 52, no 5, p. 667-670
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-147793DOI: 10.1134/S1063782618050123ISI: 000430311300032OAI: oai:DiVA.org:liu-147793DiVA, id: diva2:1206492
Conference
25th International Symposium on Nanostructures - Physics and Technology
Note

Funding Agencies|Russian Science Foundation [14-22-00107]

Available from: 2018-05-17 Created: 2018-05-17 Last updated: 2018-05-17

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Thin Film PhysicsFaculty of Science & Engineering
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CiteExportLink to record
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Citation style
  • apa
  • harvard1
  • ieee
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  • vancouver
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  • Other style
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Language
  • de-DE
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  • en-US
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  • nn-NB
  • sv-SE
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Output format
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