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Enhanced Ti0.84Ta0.16N diffusion barriers, grown by a hybrid sputtering technique with no substrate heating, between Si(001) wafers and Cu overlayers
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0002-4898-5115
Mat Ctr Leoben Forsch GmbH, Austria.
Univ Leoben, Austria.
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2018 (English)In: Scientific Reports, ISSN 2045-2322, E-ISSN 2045-2322, Vol. 8, article id 5360Article in journal (Refereed) Published
Abstract [en]

We compare the performance of conventional DC magnetron sputter-deposited (DCMS) TiN diffusion barriers between Cu overlayers and Si(001) substrates with Ti0.84Ta0.16N barriers grown by hybrid DCMS/high-power impulse magnetron sputtering (HiPIMS) with substrate bias synchronized to the metal-rich portion of each pulse. DCMS power is applied to a Ti target, and HiPIMS applied to Ta. No external substrate heating is used in either the DCMS or hybrid DCMS/HiPIMS process in order to meet future industrial thermal-budget requirements. Barrier efficiency in inhibiting Cu diffusion into Si(001) while annealing for 1 hour at temperatures between 700 and 900 degrees C is investigated using scanning electron microscopy, X-ray diffraction, four-point-probe sheet resistance measurements, transmission electron microscopy, and energy-dispersive X-ray spectroscopy profiling. Ti0.84Ta0.16N barriers are shown to prevent large-scale Cu diffusion at temperatures up to 900 degrees C, while conventional TiN barriers fail at amp;lt;= 700 degrees C. The improved performance of the Ti0.84Ta0.16N barrier is due to film densification resulting from HiPIMS pulsed irradiation of the growing film with synchronized Ta ions. The heavy ion bombardment dynamically enhances near-surface atomic mixing during barrier-layer deposition.

Place, publisher, year, edition, pages
NATURE PUBLISHING GROUP , 2018. Vol. 8, article id 5360
National Category
Materials Chemistry
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URN: urn:nbn:se:liu:diva-147408DOI: 10.1038/s41598-018-23782-9ISI: 000428618900003PubMedID: 29599468OAI: oai:DiVA.org:liu-147408DiVA, id: diva2:1206687
Note

Funding Agencies|Austrian Federal Government (from Bundesministerium fur Verkehr, Innovation und Technologie); Austrian Federal Government (Bundesministerium fur Wirtschaft, Familie und Jugend); Styrian; Tyrolean Provincial Government; Standortagentur Tirol; Swedish Research Council [2013 4018]; Knut and Alice Wallenberg Foundation; Knut and Alice Wallenberg Project "Isotope"; VINN Excellence Center Functional Nanoscale Materials (FunMat-2) [2016-05156]; Aforsk Foundation [16-359]; Carl Tryggers Foundation [CTS 17:166]

Available from: 2018-05-17 Created: 2018-05-17 Last updated: 2018-06-04

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Mühlbacher, MarleneGreczynski, GrzegorzLu, JunPetrov, IvanGreene, Joseph EHultman, Lars
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