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Defects in silicon carbide grown by fluorinated chemical vapor deposition chemistry
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Chemistry. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0002-7171-5383
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2018 (English)In: Physica. B, Condensed matter, ISSN 0921-4526, E-ISSN 1873-2135, Vol. 535, p. 44-49Article in journal (Refereed) Published
Abstract [en]

Point defects in n- and p-type 4H-SiC grown by fluorinated chemical vapor deposition (CVD) have been characterized optically by photoluminescence (PL) and electrically by deep-level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS). The results are considered in comparison with defects observed in non-fluorinated CVD growth (e.g., using SiH4 instead of SiF4 as silicon precursor), in order to investigate whether specific fluorine-related defects form during the fluorinated CVD growth, which might prohibit the use of fluorinated chemistry for device-manufacturing purposes. Several new peaks identifying new defects appear in the PL of fluorinated-grown samples, which are not commonly observed neither in other halogenated chemistries, nor in the standard CVD chemistry using silane (SiH4). However, further investigation is needed in order to determine their origin and whether they are related to incorporation of F in the SiC lattice, or not. The electric characterization does not find any new electrically-active defects that can be related to F incorporation. Thus, we find no point defects prohibiting the use of fluorinated chemistry for device-making purposes.

Place, publisher, year, edition, pages
ELSEVIER SCIENCE BV , 2018. Vol. 535, p. 44-49
Keywords [en]
Fluorinated chemical vapor deposition; Defects; Photoluminescence; Deep-level transient spectroscopy
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-147378DOI: 10.1016/j.physb.2017.06.030ISI: 000427578300009OAI: oai:DiVA.org:liu-147378DiVA, id: diva2:1207031
Conference
7th South African Conference on Photonic Materials (SACPM)
Note

Funding Agencies|Knut & Alice Wallenberg Foundation (KAW) project; SSF project "SiC - the Material for Energy-Saving Power Electronics [2016-05362]; VR Grant [2016-05362]

Available from: 2018-05-18 Created: 2018-05-18 Last updated: 2018-06-05

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Stenberg, PontusBooker, Ian DonKarhu, RobinPedersen, HenrikJanzén, ErikIvanov, Ivan Gueorguiev
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