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Approach to high quality GaN lateral nanowires and planar cavities fabricated by focused ion beam and metal-organic vapor phase epitaxy
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0002-9840-7364
St Petersburg Acad Univ, Russia; ITMO Univ, Russia.
Ioffe Inst, Russia; SHM RandE Ctr RAS, Russia.
St Petersburg Acad Univ, Russia; ITMO Univ, Russia; Ioffe Inst, Russia.
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2018 (English)In: Scientific Reports, ISSN 2045-2322, E-ISSN 2045-2322, Vol. 8, article id 7218Article in journal (Refereed) Published
Abstract [en]

We have developed a method to fabricate GaN planar nanowires and cavities by combination of Focused Ion Beam (FIB) patterning of the substrate followed by Metal Organic Vapor Phase Epitaxy (MOVPE). The method includes depositing a silicon nitride mask on a sapphire substrate, etching of the trenches in the mask by FIB with a diameter of 40 nm with subsequent MOVPE growth of GaN within trenches. It was observed that the growth rate of GaN is substantially increased due to enhanced bulk diffusion of the growth precursor therefore the model for analysis of the growth rate was developed. The GaN strips fabricated by this method demonstrate effective luminescence properties. The structures demonstrate enhancement of spontaneous emission via formation of Fabry-Perot modes.

Place, publisher, year, edition, pages
NATURE PUBLISHING GROUP , 2018. Vol. 8, article id 7218
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-147906DOI: 10.1038/s41598-018-25647-7ISI: 000431626700001PubMedID: 29740066OAI: oai:DiVA.org:liu-147906DiVA, id: diva2:1209620
Note

Funding Agencies|Russian Science Foundation [16-12-10503]; H2020 project INDEED

Available from: 2018-05-23 Created: 2018-05-23 Last updated: 2018-06-19

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