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Effect of synchronized bias in the deposition of TiB2 thin films using high power impulse magnetron sputtering
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
2018 (English)In: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 36, no 3, article id 031510Article in journal (Refereed) Published
Abstract [en]

Titanium diboride thin films have been deposited from a compound TiB2 target on Si(001) substrates at a temperature of 500 degrees C using high power impulse magnetron sputtering (HiPIMS) at a frequency of 1000 Hz and pulse lengths of 20 and 40 mu s. A -60V bias pulse of different pulse length was applied at different time delay relative to the HiPIMS pulse. The average energy per deposited species, amp;lt; E-D amp;gt; = E-i(J(i)/J(t)), where E-i is the average ion energy and J(i)/J(t) is the ratio of the ion bombarding flux to the total flux of deposited species, is strongly dependent on bias mode. A change in preferred orientation from (101) to (001) is observed when amp;lt; E-D amp;gt; increase above 50 eV. The limited adatom mobility at amp;lt; E-D amp;gt; below 50 eV promote growth of fast growing planes resulting in a (101) texture, while amp;lt; E-D amp;gt; above 50 eV supply sufficient energy for development of the thermodynamically more favorable (001) texture. A linear increase in compressive residual stress with the increase in amp;lt; E-D amp;gt; is also found, due to more intensive Ar+ ion bombardment. Analysis of charge-state-resolved plasma chemistry and ion energy shows that the total flux of bombarding ions contains a higher fraction of B+ when the bias is applied in synchronous with the HiPIMS pulse instead of after, resulting in a lower residual stress at similar values of amp;lt; E-D amp;gt; (cf. -2.0 +/- 0.2 and -2.6 +/- 0.1 GPa). This study shows that use of a bias synchronized in different modes relative to the HiPIMS pulse, can be used as a tool to control amp;lt; E-D amp;gt; and to some extent the type of bombarding species, and hence the microstructure of TiB2 thin films. Published by the AVS.

Place, publisher, year, edition, pages
A V S AMER INST PHYSICS , 2018. Vol. 36, no 3, article id 031510
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-148103DOI: 10.1116/1.5003194ISI: 000432372400037OAI: oai:DiVA.org:liu-148103DiVA, id: diva2:1211321
Note

Funding Agencies|Swedish Research Council (VR) [642-2013-8020]; Knut and Alice Wallenberg (KAW) Foundation [KAW 2015.0043]

Available from: 2018-05-30 Created: 2018-05-30 Last updated: 2018-05-30

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Nedfors, NilsVozniy, OleksiyRosén, Johanna
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