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Electron Trapping in Extended Defects in Microwave AlGaN/GaN HEMTs With Carbon-Doped Buffers
Chalmers Univ Technol, Sweden.
Chalmers Univ Technol, Sweden.
Chalmers Univ Technol, Sweden.
SweGaN AB, SE-58330 Linkoping, Sweden.
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2018 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 65, no 6, p. 2446-2453Article in journal (Refereed) Published
Abstract [en]

This paper investigates AlGaN/GaN high-electron mobility transistors (HEMTs) fabricated on epistructures with carbon (C)-doped buffers. Metalorganic chemical vapor deposition is used to grow two C-doped structures with different doping profiles, using growth parameters to change the C incorporation. The C concentration is low enough to result in n-type GaN. Reference devices are also fabricated on a structure using iron (Fe) as dopant, to exclude any process related variations and provide a relevant benchmark. All devices exhibit similar dc performance. However, pulsed I-V measurements show extensive dispersion in the C-doped devices, with values of dynamicRON 3-4 times larger than in the dc case. Due to the extensive trapping, the devices with C-dopedbuffers can only supply about half the outputpower of the Fe-doped sample, 2.5 W/mm compared to 4.8 W/mm at 10 GHz. In drain current transient measurements, the trap filling time is varied, finding large prevalence of trapping at dislocations for the C-doped samples. Clusters of C around the dislocations are suggested to be the main cause for the increased dispersion.

Place, publisher, year, edition, pages
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC , 2018. Vol. 65, no 6, p. 2446-2453
Keywords [en]
Buffer doping; carbon; dispersion; dislocations; GaN high-electronmobility transistor (HEMT); iron
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-148242DOI: 10.1109/TED.2018.2828410ISI: 000432462200058OAI: oai:DiVA.org:liu-148242DiVA, id: diva2:1213609
Note

Funding Agencies|Swedish Defence Materiel Administration; Swedish Governmental Agency for Innovation Systems; Swedish Research Council; Swedish Foundation for Strategic Research

Available from: 2018-06-05 Created: 2018-06-05 Last updated: 2018-06-05

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CiteExportLink to record
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