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Phase separation within NiSiN coatings during reactive HiPIMS discharges: A new pathway to grow NixSi nanocrystals composites at low temperature
Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0002-6602-7981
Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics. Linköping University, Faculty of Science & Engineering. Tokyo Metropolitan Univ, Japan.
Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0002-1744-7322
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2018 (English)In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 454, p. 148-156Article in journal (Refereed) Published
Abstract [en]

The precise control of the growth nanostructured thin films at low temperature is critical for the continued development of microelectronic enabled devices. In this study, nanocomposite Ni-Si-N thin films were deposited at low temperature by reactive high-power impulse magnetron sputtering. A composite Ni-Si target (15 at.% Si) in combination with a Ar/N-2 plasma were used to deposit films onto Si(0 01) substrates, without any additional substrate heating or any post-annealing. The films microstructure changes from a polycrystalline to nanocomposite structure when the nitrogen content exceeds 16 at.%. X-ray diffraction and (scanning) transmission electron microscopy analyses reveal that the microstructure consists of nanocrystals, NixSi (x amp;gt; 1) 7-8 nm in size, embedded in an amorphous SiN x matrix. It is proposed that this nanostructure is formed at low temperatures due to the repeated-nucleation of NixSi nanocrystals, the growth of which is restricted by the formation of the SiNx phase. X-ray photoelectron spectroscopy revealed the trace presence of a ternary solid solution mainly induced by the diffusion of Ni into the SiNx matrix. Four-probe electrical measurements reveal all the deposited films are electrically conducing.

Place, publisher, year, edition, pages
ELSEVIER SCIENCE BV , 2018. Vol. 454, p. 148-156
Keywords [en]
Silicon nitride; NiSi nanocrystals; HiPIMS; Nanocomposite
National Category
Materials Chemistry
Identifiers
URN: urn:nbn:se:liu:diva-149675DOI: 10.1016/j.apsusc.2018.05.061ISI: 000436944500017OAI: oai:DiVA.org:liu-149675DiVA, id: diva2:1235318
Note

Funding Agencies|Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [2009-00971]; Swedish Research Council [VR 621-2014-4882]

Available from: 2018-07-25 Created: 2018-07-25 Last updated: 2018-07-25

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Keraudy, JulienBoyd, RobertShimizu, TetsuhideHelmersson, Ulf
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