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Optical and microstructural investigation of heavy B-doping effects in sublimation-grown 3C-SiC
University of Oslo, Department of Physics, Centre for Materials Science and Nanotechnology, PO Box 1048 Blindern, Oslo, Norway.
SINTEF Materials and Chemistry, Forskningsveien 1, Oslo, Norway.
University of Oslo, Department of Physics, Centre for Materials Science and Nanotechnology, PO Box 1048 Blindern, Oslo, Norway.
University of Oslo, Department of Physics, Centre for Materials Science and Nanotechnology, PO Box 1048 Blindern, Oslo, Norway.
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2018 (English)In: Materials Science Forum, Trans Tech Publications Ltd , 2018, Vol. 924 MSF, p. 221-224Conference paper, Published paper (Refereed)
Abstract [en]

In this work, a complementary microstructural and optical approach is used to define processing conditions favorable for the formation of deep boron-related acceptor centers that may provide a pathway for achieving an intermediate band behavior in highly B-doped 3C-SiC. The crystallinity, boron solubility and precipitation mechanisms in sublimation-grown 3C-SiC crystals implanted to 1-3 at.% B concentrations were investigated by STEM. The revealed defect formation and boron precipitation trends upon thermal treatment in the range 1100-2000oC have been crosscorrelated with the optical characterization results provided by imaging PL spectroscopy. We discuss optical activity of the implanted B ions in terms of both shallow acceptors and deep D-centers, a complex formed by a boron atom and a carbon vacancy, and associate the observed spectral developments upon annealing with the strong temperature dependence of the D-center formation efficiency, which is further enhanced by the presence of implantation-induced defects. © 2018 Trans Tech Publications, Switzerland.

Place, publisher, year, edition, pages
Trans Tech Publications Ltd , 2018. Vol. 924 MSF, p. 221-224
Keywords [en]
3C-SiC; Boron doping; Defects; Implantation; Photoluminescence; STEM
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-149994DOI: 10.4028/www.scientific.net/MSF.924.221Scopus ID: 2-s2.0-85049052625ISBN: 9783035711455 (print)OAI: oai:DiVA.org:liu-149994DiVA, id: diva2:1236843
Conference
International Conference on Silicon Carbide and Related Materials, ICSCRM 2017
Note

Funding agencies:The authors gratefully acknowledge the financial support of this work by the Research Council of Norway (SunSiC Proj. No. 461224 22971), Swedish Energy Agency, Swedish Research Council (Proj. No. 621-2014-5825) and Swedish Governmental Agency for Innovation Systems (Vinnova).

Available from: 2018-08-06 Created: 2018-08-06 Last updated: 2018-08-06

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CiteExportLink to record
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Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
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  • nn-NB
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Output format
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