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A GaN-SiC hybrid material for high-frequency and power electronics
SweGaN AB, Teknikringen 8D, Linköping, Sweden.
Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg, Sweden.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
SweGaN AB, Teknikringen 8D, Linköping, Sweden.
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2018 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 113, no 4, article id 041605Article in journal (Refereed) Published
Abstract [en]

We demonstrate that 3.5% in-plane lattice mismatch between GaN (0001) epitaxial layers and SiC (0001) substrates can be accommodated without triggering extended defects over large areas using a grain-boundary-free AIN nucleation layer (NL). Defect formation in the initial epitaxial growth phase is thus significantly alleviated, confirmed by various characterization techniques. As a result, a high-quality 0.2-mu m thin GaN layer can be grown on the AIN NL and directly serve as a channel layer in power devices, like high electron mobility transistors (HEMTs). The channel electrons exhibit a state-of-the-art mobility of amp;gt;2000 cm(2)/V-s, in the AlGaN/GaN heterostructures without a conventional thick C- or Fe-doped buffer layer. The highly scaled transistor processed on the heterostructure with a nearly perfect GaN-SiC interface shows excellent DC and microwave performances. A peak RF power density of 5.8 W/mm was obtained at V-DSQ = 40 V and a fundamental frequency of 30 GHz. Moreover, an unpassivated 0.2-mu m GaN/AIN/SiC stack shows lateral and vertical breakdowns at 1.5 kV. Perfecting the GaN-SiC interface enables a GaN-SiC hybrid material that combines the high-electron-velocity thin GaN with the high-breakdown bulk SiC, which promises further advances in a wide spectrum of high-frequency and power electronics.

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2018. Vol. 113, no 4, article id 041605
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-150258DOI: 10.1063/1.5042049ISI: 000440046600014Scopus ID: 2-s2.0-85050756177OAI: oai:DiVA.org:liu-150258DiVA, id: diva2:1239785
Available from: 2018-08-17 Created: 2018-08-17 Last updated: 2018-09-06Bibliographically approved

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Lu, JunJanzén, ErikHultman, Lars
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