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Band Structure Modelling of Strained Bulk and Quantum Dot III-Nitrides to Determine the Linear Polarization for Interband Recombinations
Linköping University, Department of Physics, Chemistry and Biology.
2018 (English)Independent thesis Advanced level (degree of Master (Two Years)), 20 credits / 30 HE creditsStudent thesis
Abstract [en]

8-band k.p theory was applied to bulk GaN and InN. The optical transitionintensity was computed and results show > 80-90% degree of polarization inthe direction of compression. Polarization switching is observed when strainwas reversed from compressive to tensile. 6 band k.p theory was used tostudy InGaN quantum dot/GaN elliptical pyramid structures. The opticaltransition intensity was calculated for different elongations of the pyramid.Elongation of the pyramid gives rise to a small polarization in the directionof the pyramid elongation. The optical transition intensity was calculatedfor elongated quantum dots and was strongly in uencing the polarization inthe direction of the quantum dot elongation, with a degree of polarization of >90%.

Place, publisher, year, edition, pages
2018. , p. 90
Keywords [en]
k.p theory, strain, III-nitrides, GaN, InN, bulk, quantum dot, nanostructures, linear polarization
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-150835ISRN: LITH-IFM-A-EX—18/3568—SEOAI: oai:DiVA.org:liu-150835DiVA, id: diva2:1244683
Subject / course
Physics
Supervisors
Examiners
Available from: 2018-09-25 Created: 2018-09-03 Last updated: 2018-09-25Bibliographically approved

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CiteExportLink to record
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Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
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Output format
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  • asciidoc
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