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Demonstration of a Robust All-Silicon-Carbide Intracortical Neural Interface
Univ S Florida, FL 33620 USA.
Univ Texas Dallas, TX 75080 USA.
Nanotechnol Res and Educ Ctr USF, FL 33617 USA.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
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2018 (English)In: Micromachines, ISSN 2072-666X, E-ISSN 2072-666X, Vol. 9, no 8, article id 412Article in journal (Refereed) Published
Abstract [en]

Intracortical neural interfaces (INI) have made impressive progress in recent years but still display questionable long-term reliability. Here, we report on the development and characterization of highly resilient monolithic silicon carbide (SiC) neural devices. SiC is a physically robust, biocompatible, and chemically inert semiconductor. The device support was micromachined from p-type SiC with conductors created from n-type SiC, simultaneously providing electrical isolation through the resulting p-n junction. Electrodes possessed geometric surface area (GSA) varying from 496 to 500 K m(2). Electrical characterization showed high-performance p-n diode behavior, with typical turn-on voltages of 2.3 V and reverse bias leakage below 1 nArms. Current leakage between adjacent electrodes was 7.5 nArms over a voltage range of -50 V to 50 V. The devices interacted electrochemically with a purely capacitive relationship at frequencies less than 10 kHz. Electrode impedance ranged from 675 +/- 130 k (GSA = 496 mu m(2)) to 46.5 +/- 4.80 k (GSA = 500 K mu m(2)). Since the all-SiC devices rely on the integration of only robust and highly compatible SiC material, they offer a promising solution to probe delamination and biological rejection associated with the use of multiple materials used in many current INI devices.

Place, publisher, year, edition, pages
MDPI , 2018. Vol. 9, no 8, article id 412
Keywords [en]
neural interface; silicon carbide; robust microelectrode
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:liu:diva-151510DOI: 10.3390/mi9080412ISI: 000443256300046OAI: oai:DiVA.org:liu-151510DiVA, id: diva2:1250618
Note

Funding Agencies|University of South Florida via a Proposal Enhancement Grant; Swedish Energy Agency [43611-1]

Available from: 2018-09-24 Created: 2018-09-24 Last updated: 2018-12-03

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Ul-Hassan, Jawad
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