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Low-frequency noise in InAs films bonded on low-k flexible substrates.
Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan.
Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan.
Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan.
2015 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 107, no 19, p. 4p. 192103-1-192103-4, article id 192103Article in journal (Refereed) Published
Abstract [en]

We have systematically investigated low-frequency noise (LFN) in InAs films with several thicknesses (≃10-100 nm) bonded on low-k flexible substrates (InAs/FS), comparing with that in InAs films epitaxially grown on GaAs(001) substrates (InAs/GaAs). We obtain current LFN spectra exhibiting approximate 1/f characteristics and consequent effective Hooge parameters α depending on the thickness, where we find that α in the InAs/FS is larger than that in the InAs/GaAs. The behavior of α can be attributed to the fluctuation of the electron mobility dominated by surface/interface charge scattering and by thickness fluctuation scattering. [ABSTRACT FROM AUTHOR]

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2015. Vol. 107, no 19, p. 4p. 192103-1-192103-4, article id 192103
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-151622DOI: 10.1063/1.4935458OAI: oai:DiVA.org:liu-151622DiVA, id: diva2:1251680
Available from: 2018-09-27 Created: 2018-09-27 Last updated: 2018-10-12Bibliographically approved

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Le, Son Phuong

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