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Low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors.
Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan.
Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan.
Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan.
Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan.
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2016 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 119, no 20, p. 6p. 204503-1-204503-6, article id 204503Article in journal (Refereed) Published
Abstract [en]

Using aluminum titanium oxide (AlTiO, an alloy of Al2O3 and TiO2) as a high-k gate insulator, we fabricated and investigated AlTiO/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors. From current low-frequency noise (LFN) characterization, we find Lorentzian spectra near the threshold voltage, in addition to 1/f spectra for the well-above-threshold regime. The Lorentzian spectra are attributed to electron trapping/detrapping with two specific time constants, ~25 ms and ~3ms, which are independent of the gate length and the gate voltage, corresponding to two trap level depths of 0.5-0.7 eV with a 0.06 eV difference in the AlTiO insulator. In addition, gate leakage currents are analyzed and attributed to the Poole-Frenkel mechanism due to traps in the AlTiO insulator, where the extracted trap level depth is consistent with the Lorentzian LFN. [ABSTRACT FROM AUTHOR]

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2016. Vol. 119, no 20, p. 6p. 204503-1-204503-6, article id 204503
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-151623DOI: 10.1063/1.4952386OAI: oai:DiVA.org:liu-151623DiVA, id: diva2:1251681
Available from: 2018-09-27 Created: 2018-09-27 Last updated: 2018-10-12

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Le, Son Phuong

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