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Critical-point model dielectric function analysis of WO3 thin films deposited by atomic layer deposition techniques
Univ Nebraska, NE 68588 USA.
Univ Nebraska, NE 68588 USA.
Univ Nebraska, NE 68588 USA.
Univ Nebraska, NE 68588 USA.
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2018 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 124, no 11, article id 115302Article in journal (Refereed) Published
Abstract [en]

WO3 thin films were grown by atomic layer deposition and spectroscopic ellipsometry data gathered in the photon energy range of 0.72-8.5 eV, and from multiple samples were utilized to determine the frequency dependent complex-valued isotropic dielectric function for WO3. We employ a critical-point model dielectric function analysis and determine a parameterized set of oscillators and compare the observed critical-point contributions with the vertical transition energy distribution found within the band structure of WO3 calculated by the density functional theory. The surface roughness was investigated using atomic force microscopy, and compared with the effective roughness as seen by the spectroscopic ellipsometry. Published by AIP Publishing.

Place, publisher, year, edition, pages
AMER INST PHYSICS , 2018. Vol. 124, no 11, article id 115302
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Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-151944DOI: 10.1063/1.5038746ISI: 000445367200021OAI: oai:DiVA.org:liu-151944DiVA, id: diva2:1256351
Note

Funding Agencies|National Science Foundation (NSF) through the Center for Nanohybrid Functional Materials [EPS-1004094]; Nebraska Materials Research Science and Engineering Center (MRSEC) [DMR-1420645]; University of Nebraska-Lincoln; J. A. Woollam Co., Inc.; J. A. Woollam Foundation; [CMMI 1337856]; [EAR 1521428]

Available from: 2018-10-16 Created: 2018-10-16 Last updated: 2018-10-16

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  • Other style
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