liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Thermal Stress Evaluation of Tunneling Magnetoresistive Structures in Data Storage Devices
Chulalongkorn Univ, Thailand; Western Digital Corp, Thailand.
Western Digital Corp, Thailand.
Western Digital Corp, Thailand.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0001-9140-6724
Show others and affiliations
2018 (English)In: IEEE Magnetics Letters, ISSN 1949-307X, E-ISSN 1949-3088, Vol. 9, article id 2506104Article in journal (Refereed) Published
Abstract [en]

The conventional read sensor technology used in hard disk drives is the tunneling magnetoresistive (TMR) device. The technology evolution of the TMR device toward higher signal-to-noise performance has been achieved through aggressive scaling of the thin film layered structures in the device to the point that thermal stability and thermally induced degradation have come to limit reliability. In this study, a thermal stress has been applied to TMR devices between 150-250 degrees C, and the resistance, amplitude, and asymmetry parameters, both before and after the thermal stress, were measured using a quasi-static test (QST). The results reveal a temperature dependence of the TMR device performance. The microstructure of the annealed devices was further studied using transmission electron microscopy and energy dispersive X-ray analysis, revealing structural defects that are related to the QST parametric changes. Both atomic misalignment of the MgO layer and Ir depletion are proposed as origins for the instability of the magnetic response in the device after thermal stress.

Place, publisher, year, edition, pages
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC , 2018. Vol. 9, article id 2506104
Keywords [en]
Magneto-electronics; information storage; recording head; tunneling magnetoresistive
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-152107DOI: 10.1109/LMAG.2018.2869818ISI: 000446126100001OAI: oai:DiVA.org:liu-152107DiVA, id: diva2:1256664
Note

Funding Agencies|Western Digital (Thailand) Company, Ltd.; Chulalongkorn University; Swedish Research Council (VR) [2016-04412]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [SFO-Mat-LiU 2009-00971]

Available from: 2018-10-17 Created: 2018-10-17 Last updated: 2018-10-17

Open Access in DiVA

No full text in DiVA

Other links

Publisher's full text

Search in DiVA

By author/editor
Persson, Per O A
By organisation
Thin Film PhysicsFaculty of Science & Engineering
In the same journal
IEEE Magnetics Letters
Condensed Matter Physics

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 55 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf