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Ring resonator optical modes in InGaN/GaN structures grown on micro-cone-patterned sapphire substrates
Ioffe Inst, Russia.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0002-9840-7364
Ioffe Inst, Russia.
Ioffe Inst, Russia.
2018 (English)In: 19TH RUSSIAN YOUTH CONFERENCE ON PHYSICS OF SEMICONDUCTORS AND NANOSTRUCTURES, OPTO- AND NANOELECTRONICS, IOP PUBLISHING LTD , 2018, Vol. 993, article id UNSP 012020Conference paper, Published paper (Refereed)
Abstract [en]

Molecular beam epitaxy (MBE) of III-nitride compounds on specially prepared cone-shaped patterned substrates is being actively developed nowadays, especially for nanophotonic applications. This type of substrates enables the successful growth of hexagonal nanorods (NRs). The insertion of an active quantum-sized region of InGaN inside a GaN NR allows us to enhance the rate of optical transitions by coupling them with resonant optical modes in the NR. However, we have observed the enhancement of emission not only from the NR but also around the circumference region of the cone-shaped base. We have studied this specific feature and demonstrated its impact on the output signal.

Place, publisher, year, edition, pages
IOP PUBLISHING LTD , 2018. Vol. 993, article id UNSP 012020
Series
Journal of Physics Conference Series, ISSN 1742-6588
National Category
Atom and Molecular Physics and Optics
Identifiers
URN: urn:nbn:se:liu:diva-152103DOI: 10.1088/1742-6596/993/1/012020ISI: 000446620300020OAI: oai:DiVA.org:liu-152103DiVA, id: diva2:1256669
Conference
19th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics
Note

Funding Agencies|Russian Science Foundation [14-22-00107]

Available from: 2018-10-17 Created: 2018-10-17 Last updated: 2018-10-17

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  • Other style
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