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Band-gap tailoring of Zno by means of heavy Al doping
Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics. Linköping University, Faculty of Science & Engineering. Solid State Dioision, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA.ORCID iD: 0000-0002-6281-868X
Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics. Linköping University, Faculty of Science & Engineering.
Physics Department, Chalmers Uniuersity of Technology, Gothenburg, Sweden.
Physics Department, Chalmers Uniuersity of Technology, Gothenburg, Sweden.
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1988 (English)In: Physical Review B Condensed Matter, ISSN 0163-1829, E-ISSN 1095-3795, Vol. 37, no 17, p. 10244-10248Article in journal (Refereed) Published
Abstract [en]

Films of ZnO:Al were produced by weakly reactive dual-target magnetron sputtering. Optical band gaps, evaluated from spectrophotometric data, were widened in proportion to the Al doping.The widening could be quantitatively reconciled with an effective-mass model for n-doped semiconductors, provided the polar character of ZnO was accounted for.

Place, publisher, year, edition, pages
American Physical Society, 1988. Vol. 37, no 17, p. 10244-10248
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Physical Sciences
Identifiers
URN: urn:nbn:se:liu:diva-152483DOI: 10.1103/PhysRevB.37.10244ISI: A1988N946900040Scopus ID: 2-s2.0-0001447933OAI: oai:DiVA.org:liu-152483DiVA, id: diva2:1260589
Available from: 2018-11-04 Created: 2018-11-04 Last updated: 2019-03-21Bibliographically approved

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Sernelius, BoBerggren, Karl-Fredrik

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