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Band-gap widening in heavily Sn-daped In203
Physics Department, Chalmers University of Technology, Göteborg, Sweden.
Physics Department, Chalmers University of Technology, Göteborg, Sweden.
Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics. Linköping University, Faculty of Science & Engineering. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-6281-868X
1984 (English)In: Physical Review B Condensed Matter, ISSN 0163-1829, E-ISSN 1095-3795, Vol. 30, no 6, p. 3240-3249Article in journal (Refereed) Published
Abstract [en]

Films of pure and Sn-doped semiconducting Inz03 were prepared by reactive e-beam evaporation. The spectral absorption coefficient was evaluated by spectrophotometry in the (2—6)-eV range. The extracted band gap increases with electron density (ne ) approximately as ne 2/3 for ne ≤10-21 cm-3 . This result is interpreted within an effective-mass model for n-doped semiconductors well above the Mott critical density. Because of the high degree of doping, the impurities are ionized and the associated electrons occupy the bottom of the conduction band in the form of an electron gas. The model accounts for a Burstein-Moss shift as well as electron-electron and electron-impurity scattering treated in the random-phase approximation. Experiments and theory were reconciled by assuming a parabolic valence band with an effective mass -0.6m. Earlier work on doped oxide semiconductors are assessed in the light of the present results.

Place, publisher, year, edition, pages
American Physical Society, 1984. Vol. 30, no 6, p. 3240-3249
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Physical Sciences
Identifiers
URN: urn:nbn:se:liu:diva-152486DOI: 10.1103/PhysRevB.30.3240ISI: A1984TJ42300030Scopus ID: 2-s2.0-35949015935OAI: oai:DiVA.org:liu-152486DiVA, id: diva2:1260596
Available from: 2018-11-04 Created: 2018-11-04 Last updated: 2019-03-21Bibliographically approved

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Berggren, Karl-FredrikSernelius, Bo

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