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Effect of impurities on morphology, growth mode, and thermoelectric properties of (111) and (001) epitaxial-like ScN films
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0002-4898-5115
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2019 (English)In: Journal of Physics D: Applied Physics, ISSN 0022-3727, E-ISSN 1361-6463, Vol. 52, no 3, article id 035302Article in journal (Refereed) Published
Abstract [en]

ScN is an emerging semiconductor with an indirect bandgap. It has attracted attention for its thermoelectric properties, use as seed layers, and for alloys for piezoelectric application. ScN and other transition metal nitride semiconductors used for their interesting electrical properties are sensitive to contaminants, such as oxygen or fluorine. In this present article, the influence of depositions conditions on the amount of oxygen contaminants incorporated in ScN films were investigated and their effects on the electrical properties (electrical resistivity and Seebeck coefficient) were studied. Epitaxial-like films of thickness 125 +/- 5 nm to 155 +/- 5 nm were deposited by DC-magnetron sputtering on c-plane Al-2, O-3(111) and r-plane Al2O3 at substrate temperatures ranging from 700 degrees C to 950 degrees C. The amount of oxygen contaminants in the film, dissolved into ScN or as an oxide, was related to the adatom mobility during growth, which is affected by the deposition temperature and the presence of twin domain growth. The lowest values of electrical resistivity of 50 mu Omega cm were obtained on ScN(1 1 1)/ MgO(111) and on ScN(001)/r-plane Al2O3 grown at 950 degrees C with no twin domains and the lowest amount of oxygen contaminant. At the best, the films exhibited an electrical resistivity of 50 mu Omega cm with Seebeck coefficient values maintained at -40 mu V K-1, thus a power factor estimated at 3.2 x 10(-3) W m(-1) K-2 (at room temperature).

Place, publisher, year, edition, pages
IOP PUBLISHING LTD , 2019. Vol. 52, no 3, article id 035302
Keywords [en]
ScN; thin films; sputtering; x-ray spectroscopy; thermoelectricity
National Category
Inorganic Chemistry
Identifiers
URN: urn:nbn:se:liu:diva-153142DOI: 10.1088/1361-6463/aaeb1bISI: 000450225000002OAI: oai:DiVA.org:liu-153142DiVA, id: diva2:1267345
Note

Funding Agencies|European Research Council under the European Communitys Seventh Framework Programme (FP = 2007-2013) ERC Grant [335383]; Swedish Foundation for Strategic Research (SSF) through the Future Research Leaders 5 program; Swedish Research Council (VR) [2016-03365]; Knut and Alice Wallenberg Foundation through the Wallenberg Academy Fellows program; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [2009 00971]; Aforsk Foundation [16-359]; Carl Tryggers Stiftelse [CTS 17:166]

Available from: 2018-12-01 Created: 2018-12-01 Last updated: 2019-03-22

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Le Febvrier, ArnaudTureson, NinaStilkerich, NinaGreczynski, GrzegorzEklund, Per
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