Origin of photocurrent in lateral quantum dots-in-a-well infrared photodetectors
2006 (English)In: Applied Physics Letters, ISSN 0003-6951, Vol. 88, no 21Article in journal (Refereed) Published
Interband and intersubband transitions of lateral InAs/In0.15Ga0.85As dots-in-a-well quantum dot infrared photodetectors were studied in order to determine the origin of the photocurrent. The main intersubband transition contributing to the photocurrent (PC) was associated with the quantum dot ground state to the quantum well excited state transition. By a comparison between intersubband PC measurements and the energy level scheme of the structure, as deduced from Fourier transform photoluminescence (FTPL) and FTPL excitation spectroscopies, the main transition contributing to the PC was identified.
Place, publisher, year, edition, pages
American Institute of Physics , 2006. Vol. 88, no 21
indium compounds, gallium arsenide, III-V semiconductors, semiconductor quantum wells, semiconductor quantum dots, photodetectors, infrared detectors, photoluminescence, ground states, excited states, Fourier transform spectra, photoconductivity
Other Engineering and Technologies not elsewhere specified
IdentifiersURN: urn:nbn:se:liu:diva-15766DOI: 10.1063/1.2207493OAI: oai:DiVA.org:liu-15766DiVA: diva2:127228
Linda Höglund, Per-Olof Holtz, C. Asplund, Q. Wang, S. Almqvist, H. Malm, E. Petrini, H. Pettersson and J. Y. Andersson, Origin of photocurrent in lateral quantum dots-in-a-well infrared photodetectors, 2006, Applied Physics Letters, (88), 213510.
Copyright: American Institute of Physics