Optical pumping as artificial doping in quantum dots-in-a-well infrared photodetectors
2009 (English)In: Applied Physics Letters, ISSN 0003-6951, Vol. 94, no 5, 053503- p.Article in journal (Refereed) Published
Resonant optical pumping across the band gap was used as artificial doping in InAs/In0.15Ga0.85As/GaAs quantum dots-in-a-well infrared photodetectors. By selectively increasing the electron population in the different quantum dot energy levels, the low temperature photocurrent peaks observed at 120 and 148 meV, could be identified as intersubband transitions emanating from the quantum dot ground state and the quantum dot excited state, respectively. With efficient filling of the quantum dot energy levels through simultaneous optical pumping into the ground states and the excited states of the quantum dots, the response was increased by a factor of 10.
Place, publisher, year, edition, pages
2009. Vol. 94, no 5, 053503- p.
doping, excited states, gallium arsenide, III-V semiconductors, indium compounds, infrared detectors, optical pumping, photodetectors, quantum well devices, semiconductor quantum dots
Other Engineering and Technologies not elsewhere specified
IdentifiersURN: urn:nbn:se:liu:diva-15770DOI: 10.1063/1.3073048OAI: oai:DiVA.org:liu-15770DiVA: diva2:127231
Original Publication:Linda Höglund, Q. Wang, S. Almqvist, E. Petrini, J. Y. Andersson, Per-Olof Holtz, H. Pettersson, C. Asplund and H. Malm, Optical pumping as artificial doping in quantum dots-in-a-well infrared photodetectors, 2009, Applied Physics Letters, (94), 053503.http://dx.doi.org/10.1063/1.3073048Copyright: American Institute of Physicshttp://www.aip.org/2009-03-042008-12-032009-04-30Bibliographically approved