Energy level scheme of an InAs/InGaAs/GaAs quantum dots-in-a-well infraredphotodetector structure
2010 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 82, no 3, 035314- p.Article in journal (Refereed) Published
A thorough investigation of the energy level structure in a quantum-dots-in-a-well infrared photodetector has been performed employing different experimental techniques. From photoluminescence (PL) and PL excitation (PLE) spectroscopy an approximate energy level scheme of the conduction and valence band energy structures was deduced. By studying the polarisation dependence of the quantum dot interband transitions, it was revealed that the QDs hold two electron energy levels and two heavy hole levels. An electron energy level separation of 50 meV was deduced from tunneling capacitance measurements. From photocurrent measurements with simultaneous optical pumping a quantum dot - quantum well energy level separation of 150 meV was revealed.
Place, publisher, year, edition, pages
2010. Vol. 82, no 3, 035314- p.
National CategoryOther Engineering and Technologies not elsewhere specified
IdentifiersURN: urn:nbn:se:liu:diva-15772DOI: 10.1103/PhysRevB.82.035314ISI: 000280208000007OAI: oai:DiVA.org:liu-15772DiVA: diva2:127232
Linda Höglund, K. Fredrik Karlsson, Per-Olof Holtz, H. Pettersson, L.E. Pistol, Q. Wang, S. Almqvist, C. Asplund, H. Malm, E. Petrini and J. Y. Andersson, Energy level scheme of an InAs/InGaAs/GaAs quantum dots-in-a-well infraredphotodetector structure, 2010, Physical Review B. Condensed Matter and Materials Physics, (82), 3, 035314.
Copyright: American Physical Society