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Thin film growth and characterization of Ti-Si-C MAX-phases
Linköping University, Department of Physics, Measurement Technology, Biology and Chemistry. Linköping University, The Institute of Technology.
2004 (English)Licentiate thesis, comprehensive summary (Other academic)
Abstract [en]

This thesis describes the growth of Ti-Si-C MAX-phases on A12O3(0001) and MgO(111) substrates with the emphasis on epitaxial Ti3SiC2 thin films by means of DC magnetron sputtering. Ti3SiC2, Ti4SiC3 as well as the two intergrown structures Ti5Si2C3 and Ti7Si2C5 were grown using sputtering from three individual elemental targets of Ti, Si, and C, respectively. X-ray diffraction analysis of the films revealed single-phase and epitaxial growth of Tin+1SiCn(0001) (n = 2, 3) MAX-phases at substrate temperatures above 700 °C. MgO(100) substrates as growth templates provided growth of Ti3SiC2 in a preferred orientation of (1015). TEM and XRD investigations showed that at 700 °C and below Si is accommodated at twin boundaries between TiC(111) planes. Depositions at substrate temperatures of 350 °C and RT resulted in nanocrystalline TiC growth with substitutionally-incorporated Si due to kinetic constraints.

Mechanical properties were investigated using nanoindentation with cube corner and Berkovich indenters. With small indentation depth, hardness values of up to 24 GPa were measured for Ti3SiC2 films. Increasing maximum loads yielded lower hardnesses approaching bulk values. Young's moduli of 320 and 343 GPa were observed applying cube comer and Berkovich indenter, respectively. Cross-sectional TEM through indentations made with a Berkovich indenter were used to study the deformation behavior of the MAX-phases. Deformation energy is dissipated in kink formation, with edge dislocation pile-ups at the kink boundary, and delamination along basal planes.

Four-point probe measurements on Ti3SiC2 MAX-phase thin films deposited at 900 °C showed a low room temperature resistivity of ~ 25 µΩcm, which increased with lower deposition temperatures. Ti4SiC3 films demonstrated an increased resistivity up to ~ 50 µΩcm.

Place, publisher, year, edition, pages
Linköping: Linköpings universitet , 2004. , p. 31
Series
Linköping Studies in Science and Technology. Thesis, ISSN 0280-7971 ; 1100
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:liu:diva-153033Local ID: LiU-TEK-LIC-2004:29ISBN: 9173739782 (print)OAI: oai:DiVA.org:liu-153033DiVA, id: diva2:1278587
Available from: 2019-01-29 Created: 2019-01-14 Last updated: 2019-05-10Bibliographically approved

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Emmerlich, Jens

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