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An adhesive bonding approach by hydrogen silsesquioxane for silicon carbide-based LED applications
Tech Univ Denmark, Denmark.
Tech Univ Denmark, Denmark.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
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2019 (English)In: Materials Science in Semiconductor Processing, ISSN 1369-8001, E-ISSN 1873-4081, Vol. 91Article in journal (Refereed) Published
Abstract [en]

We report an adhesive bonding approach using hydrogen silsesquioxane (HSQ) for silicon carbide (SiC) samples. A hybrid light-emitting diode (LED) was successfully fabricated through bonding a near-ultraviolet (NUV) LED grown on a commercial 4H-SiC substrate to a free-standing boron-nitrogen co-doped fluorescent-SiC epi-layer. The bonding quality and the electrical performance of the hybrid LED device were characterized. Neither voids nor defects were observed which indicates a good bonding quality of the proposed HSQ approach. A strong warm white emission was successfully obtained from the hybrid LED through an electric current injection of 30 mA.

Place, publisher, year, edition, pages
ELSEVIER SCI LTD , 2019. Vol. 91
Keywords [en]
Hydrogen silsesquioxane bonding; Fluorescent-silicon carbide; Warm white light-emitting diodes
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-153953DOI: 10.1016/j.mssp.2018.10.028ISI: 000454537700002OAI: oai:DiVA.org:liu-153953DiVA, id: diva2:1281580
Note

Funding Agencies|Innovation Fund Denmark [4106-00018B]

Available from: 2019-01-22 Created: 2019-01-22 Last updated: 2019-03-29

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Citation style
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Output format
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