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High temperature-stability of organic thin-film transistors based on quinacridone pigments
Johannes Kepler Univ Linz, Austria; Karabuk Univ, Turkey.
Johannes Kepler Univ Linz, Austria.
Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, Faculty of Science & Engineering. Johannes Kepler Univ Linz, Austria.ORCID iD: 0000-0002-0280-8017
Joanneum Res Forschungsgesell mbH, Austria.
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2019 (English)In: Organic electronics, ISSN 1566-1199, E-ISSN 1878-5530, Vol. 66, p. 53-57Article in journal (Refereed) Published
Abstract [en]

Robust organic thin-film transistors (OTFTs) with high temperature stability allow device integration with mass production methods like thermoforming and injection molding, and enable operation in extreme environment applications. Herein we elaborate a series of materials to make suitable gate dielectric and active semiconductor layers for high temperature stable OTFTs. We employ an anodized aluminum oxide layer passivated with cross-linked low-density polyethylene (LD-PE) to form a temperature-stable gate capacitor. As the semiconductor, we use quinacridone, an industrial organic colorant pigment produced on a mass scale. Evaporated MoOx/Ag source and drain electrodes complete the devices. Here we evaluate the performance of the OTFTs healing them in air from 100 degrees C in 25 degrees C increments up to 225 degrees C, holding each temperature for a period of 30 minutes. We find large differences in stability between quinacridone and its dimethylated derivative, with the former showing the best performance with only a factor of 2 decline in mobility after healing at 225 degrees C, and unaffected on/off ratio and threshold voltage. The approach presented here shows how industriallys calable fabrication of thermally robust OTFTs can be rationalized.

Place, publisher, year, edition, pages
ELSEVIER SCIENCE BV , 2019. Vol. 66, p. 53-57
Keywords [en]
Quinacridone; Quinacridone transistor; Pigment transistor; Organic field effect transistors; Thermally stable transistor; Injection molding; Thermoforming; Air stable transistor; Hydrogen-bonded semiconductor; Vacuum evaporated polyethylene
National Category
Inorganic Chemistry
Identifiers
URN: urn:nbn:se:liu:diva-154090DOI: 10.1016/j.orgel.2018.12.004ISI: 000455249800008OAI: oai:DiVA.org:liu-154090DiVA, id: diva2:1283671
Note

Funding Agencies|Austrian Research Promotion Agency (FFG) [842496]; Austrian Science Foundation (FWF) [Z 222-N19]; TUBITAK-BIDEB

Available from: 2019-01-29 Created: 2019-01-29 Last updated: 2019-01-29

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