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CVD growth and properties of on-axis vanadium doped semi-insulating 4H-SiC epilayers
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering. Univ Iceland, Iceland.
Norstel AB, Sweden.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0003-1000-0437
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2019 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 125, no 4, article id 045702Article in journal (Refereed) Published
Abstract [en]

Highly resistive homoepitaxial layers of 4H-SiC have been grown on the Si-face of nominally on-axis, n-type substrates using chemical vapor deposition. Vanadium tetrachloride has been used as the V-dopant which is responsible for the high resistivity of the epilayers. 100% 4H-polytype was reproduced in the epilayers using the optimized on-axis growth process. The upper limit of vanadium tetrachloride flow rate was also established to achieve high resistivity epilayers free of 3C polytype inclusion. A resistivity of more than 1 x 10(5) Omega cm has been achieved in epilayers with a very low concentration of V (1 x 10(15) cm(-3)). Owing to the low concentration of V, superior epilayer structural quality was achieved compared to V-doped and standard high purity semi-insulating bulk grown material of similar resistivity. Epitaxial layers with varying vanadium tetrachloride flow have also been grown to study the influence of V concentration on the polytype stability, structural quality, and optical and electrical properties of epilayers. A clear correspondence has been observed in the flow-rates of vanadium tetrachloride, the atomic concentration of V, and electrical, optical, and structural properties of epilayers. Published under license by AIP Publishing.

Place, publisher, year, edition, pages
AMER INST PHYSICS , 2019. Vol. 125, no 4, article id 045702
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Other Materials Engineering
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URN: urn:nbn:se:liu:diva-154687DOI: 10.1063/1.5057389ISI: 000457409600042OAI: oai:DiVA.org:liu-154687DiVA, id: diva2:1292650
Note

Funding Agencies|Swedish Energy Agency Energimyndigheten Project [43611-1]; Swedish Government Strategic Research Area in Materials Science; Electronic Component Systems for European Leadership Joint Undertaking [662322]; European Unions Horizon 2020 Research and Innovation Program

Available from: 2019-02-28 Created: 2019-02-28 Last updated: 2019-03-15

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Karhu, RobinSveinbjörnsson, EinarIvanov, Ivan GueorguievDanielsson, ÖrjanUl-Hassan, Jawad
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