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Growth, structure and properties of ternary transition metal nitride thin films prepared by reactive magnetron sputtering
Linköping University, Department of Physics, Measurement Technology, Biology and Chemistry. Linköping University, The Institute of Technology.
2003 (English)Licentiate thesis, comprehensive summary (Other academic)
Abstract [en]

Early transition metal nitrides have found an extensive use in a range of applications. Even though the use is wide there are still large fields to explore. The work in this thesis has been directed towards increasing the fundamental understanding of the synthesis, characterization, and properties for some technologically relevant nitrides. Both binary and ternary phases of transition metal nitrides have been studied. In order to do so pure film materials were achieved by Ultra-High Vacuum Reactive Magnetron Sputtering. Findings from the TiN/TaN system show a correlation between phase composition in TaN and the stress evolution measured in-situ during deposition. It is also shown how the individual layers in a multilayer (thickness ~30 Å) effects the stress with a sub-nm resolution. The contribution from thermal stress is seen and the increase in temperature due to bombardment of energetic particles is calculated from that stress. In the NbxZr1-xN system experiments and calculations on the phase are used to derive a valence electron concentration, corresponding to x = 0.5, for which the films exhibit an enhanced number of stacking faults. This result in an effective hardness increase by 20 % compared to ZrN and NbN. MAX-structured Ti2A1N is synthesized for the first time in the thin film form and a pure single phase epitaxial film is grown on MgO(111) at 830°C. The Ti2A1N is characterized with respect to structure and mechanical properties. The room-temperature resistivity found is 39 µΩcm and the Young's modulus and hardness 210 and 16.1 GPa, respectively.

Place, publisher, year, edition, pages
Linköping: Linköpings universitet , 2003. , p. 36
Series
Linköping Studies in Science and Technology. Thesis, ISSN 0280-7971 ; 1029
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:liu:diva-152962Local ID: LiU-TEK-LIC-2003:28ISBN: 9173736910 (print)OAI: oai:DiVA.org:liu-152962DiVA, id: diva2:1293636
Available from: 2019-03-05 Created: 2019-03-05 Last updated: 2019-05-24Bibliographically approved

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Joelsson, Torbjörn

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CiteExportLink to record
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Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
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  • Other style
More styles
Language
  • de-DE
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  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
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