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Two-Dimensional Hydroxyl-Functionalized and Carbon-Deficient Scandium Carbide, ScCxOH, a Direct Band Gap Semiconductor
Chinese Acad Sci, Peoples R China.
Chinese Acad Sci, Peoples R China.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0003-1785-0864
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2019 (English)In: ACS Nano, ISSN 1936-0851, E-ISSN 1936-086X, Vol. 13, no 2, p. 1195-1203Article in journal (Refereed) Published
Abstract [en]

Two-dimensional (2D) materials have attracted intense attention in nanoscience and nanotechnology due to their outstanding properties. Among these materials, the emerging family of 2D transition metal carbides, carbonitrides, and nitrides (referred to as MXenes) stands out because of the vast available chemical space for tuning materials chemistry and surface termination, offering opportunities for property tailoring. Specifically, semiconducting properties are needed to enable utilization in optoelectronics, but direct band gaps are experimentally challenging to achieve in these 2D carbides. Here, we demonstrate the fabrication of 2D hydroxyl-functionalized and carbon-deficient scandium carbide, namely, ScCxOH, by selective etching of a layered parent ScAI(3)C(3) compound. The 2D configuration is determined as a direct band gap semiconductor, with an experimentally measured band gap approximated at 2.5 eV. Furthermore, this ScCxOH-based device exhibits excellent photoresponse in the ultraviolet-visible light region (responsivity of 0.125 A/W at 360 nm/10 V, and quantum efficiency of 43%). Thus, this 2D ScCxOH direct band gap semiconductor may find applications in visible light detectors, photocatalytic chemistry, and optoelectronic devices.

Place, publisher, year, edition, pages
AMER CHEMICAL SOC , 2019. Vol. 13, no 2, p. 1195-1203
Keywords [en]
MXene; two-dimensional material; selective etching; DFT calculation; electronic properties; photodetector
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-155579DOI: 10.1021/acsnano.8b06279ISI: 000460199400024PubMedID: 30703319OAI: oai:DiVA.org:liu-155579DiVA, id: diva2:1297921
Note

Funding Agencies|National Key Research and Development Program of China [2016YFB0700100]; National Natural Science Foundation of China [11604346, 21671195, 21805295, 21875271, 51502310, 21577144, 91426304]; Key Research Program of Frontier Sciences, CAS [QYZDB-SSW-JSC037]; K.C. Wong Education Foundation [rczx0800]; CAS Interdisciplinary Innovation Team; Research Infrastructure Fellow Program [RIF 14-0074]; Swedish Research Council [2016-04412]; key technology of nuclear energy

Available from: 2019-03-21 Created: 2019-03-21 Last updated: 2019-03-21

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Yildizhan Özyar, MelikeEklund, PerPersson, Per O A
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