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Ligand hyperfine interactions at silicon vacancies in 4H-SiC
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering. Ascatron AB, Sweden.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
Natl Inst Quantum and Radiol Sci and Technol, Japan.
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2019 (English)In: Journal of Physics: Condensed Matter, ISSN 0953-8984, E-ISSN 1361-648X, Vol. 31, no 19, article id 195501Article in journal (Refereed) Published
Abstract [en]

The negative silicon vacancy (V-Si(-)) in SiC has recently emerged as a promising defect for quantum communication and room-temperature quantum sensing. However, its electronic structure is still not well characterized. While the isolated Si vacancy is expected to give rise to only two paramagnetic centers corresponding to two inequivalent lattice sites in 4H-SiC, there have been five electron paramagnetic resonance (EPR) centers assigned to V-Si(-) in the past: the so-called isolated no-zero-field splitting (ZFS) V-Si(-) center and another four axial configurations with small ZFS: T-V1a, T-V2a, T-V1b, and T-V2b. Due to overlapping with Si-29 hyperfine (hf) structures in EPR spectra of natural 4H-SiC, hf parameters of T-V1a have not been determined. Using isotopically enriched 4H-(SiC)-Si-28, we overcome the problems of signal overlapping and observe hf parameters of nearest C neighbors for all three components of the S = 3/2 T-V1a and T-V2a centers. The obtained EPR data support the conclusion that only T-V1a and T-V2a are related to V-Si(-) and the two configurations of the so-called isolated no-ZFS V-Si(-) center, V-Si(-) (I) and V-Si(-) (II), are actually the central lines corresponding to the transition I-1/2 amp;lt;-amp;gt; I + 1/2 of the T-V2a and T-V1a centers, respectively.

Place, publisher, year, edition, pages
IOP PUBLISHING LTD , 2019. Vol. 31, no 19, article id 195501
Keywords [en]
silicon vacancy; hyperfine interaction; electron paramagnetic resonance
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-155906DOI: 10.1088/1361-648X/ab072bISI: 000461213400001PubMedID: 30763923OAI: oai:DiVA.org:liu-155906DiVA, id: diva2:1301576
Note

Funding Agencies|Swedish Research Council [VR 2016-04068, VR 2016-05362]; Carl Trygger Stiftelse for Vetenskaplig Forskning [CTS 15:339]; Swedish Energy Agency [43611-1]; JSPS KAKENHI [A 17H01056]

Available from: 2019-04-02 Created: 2019-04-02 Last updated: 2019-10-25

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Ivanov, Ivan Gueorguiev

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