liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Stress-induced charge trapping and electrical properties of atomic-layer-deposited HfAlO/Ga2O3 metal-oxide-semiconductor capacitors
Xidian Univ, Peoples R China.
Xidian Univ, Peoples R China.
Xidian Univ, Peoples R China.
Xidian Univ, Peoples R China.
Show others and affiliations
2019 (English)In: Journal of Physics D: Applied Physics, ISSN 0022-3727, E-ISSN 1361-6463, Vol. 52, no 21, article id 215104Article in journal (Refereed) Published
Abstract [en]

Electrical properties and trapping characteristics of an atomic layer deposited Al-rich HfAlO/beta-Ga2O3 capacitor were evaluated via constant-voltage stress (CVS), capacitance-voltage (C-V), and current-voltage (I-V) measurements. The magnitude of the stress-induced charge trapping increases with increasing voltage and time. The effective charges (N-eff) including the border traps located in near-interface oxide, interface traps (D-it) of HfAlO/beta-Ga2O3 interface, and fixed charges contribute significantly to the observed charge trapping, and it is found that interface traps contribute more under a large stress bias, compared with border traps. In addition, the effective charge density is increased with stress time, implying that the contribution of negative sheet charges during the CVS process might not be negligible. Measurements of oxide permittivity (10.74), interface state density (D-it similar to 1 x 10(12) eV(-1) cm(-2)), and gate leakage current (1.18 x 10( -5) A cm(-2) at +10 V) have been extracted, suggesting the great electrical properties of Al-rich HfAlO/beta-Ga203 MOSCAP. According to the above analysis, Al-rich HfAlO is an attractive candidate for normally off Ga2O3 transistors.

Place, publisher, year, edition, pages
IOP PUBLISHING LTD , 2019. Vol. 52, no 21, article id 215104
Keywords [en]
gallium oxide; HfAlO/Ga2O3 MOSCAP; constant-voltage stress; oxide traps
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-156090DOI: 10.1088/1361-6463/ab0b93ISI: 000461791200002OAI: oai:DiVA.org:liu-156090DiVA, id: diva2:1302146
Note

Funding Agencies|National Natural Science Foundation of China [51742196, 5161101495, 61704125]; Fundamental Research Funds for the Central Universities [XJS17059, JBX171105]; Swedish Foundation for International Cooperation in Research and Higher Education (STINT) [CH2016-6722]; Key Laboratory of Microelectronic Devices and Integrated Technology, Chinese Academy of Sciences

Available from: 2019-04-03 Created: 2019-04-03 Last updated: 2019-09-24

Open Access in DiVA

The full text will be freely available from 2020-03-20 11:05
Available from 2020-03-20 11:05

Other links

Publisher's full text

Search in DiVA

By author/editor
Sun, Jianwu
By organisation
Semiconductor MaterialsFaculty of Science & Engineering
In the same journal
Journal of Physics D: Applied Physics
Condensed Matter Physics

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 25 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf