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Molecular beam epitaxial growth of dilute nitride GaNAs and GaInNAs nanowires
Ehime Univ, Japan.
Ehime Univ, Japan.
Ehime Univ, Japan.
Ehime Univ, Japan.
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2019 (English)In: Nanotechnology, ISSN 0957-4484, E-ISSN 1361-6528, Vol. 30, no 24, article id 244002Article in journal (Refereed) Published
Abstract [en]

We report the growth of dilute nitride GaNAs and GaInNAs core-multishell nanowires (NWs) using molecular beam epitaxy assisted by a plasma source. Using the self-catalyst vapor-liquid-solid growth mode, these NWs were grown on Si(111) and silicon on insulator substrates. The GaNAs and GaInNAs shells contain nitrogen up to 3%. Axial cross-sectional scanning transmission electron microscopy measurements and energy-dispersive x-ray spectrometry confirm the formation of the core-multishell NW structure. We obtained high-quality GaNAs NWs with nitrogen compositions up to 2%. On the other hand, GaNAs containing 3% nitrogen, and GaInNAs NWs, show distorted structures; moreover, the optical emissions seem to be related to defects. Further optimisations of the growth conditions will improve these properties, promising future applications in nanoscale optoelectronics.

Place, publisher, year, edition, pages
IOP PUBLISHING LTD , 2019. Vol. 30, no 24, article id 244002
Keywords [en]
nanowire; GaAs; dilute nitrides; molecular beam epitaxy
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-156373DOI: 10.1088/1361-6528/ab0974ISI: 000462610400002PubMedID: 30794991OAI: oai:DiVA.org:liu-156373DiVA, id: diva2:1305823
Note

Funding Agencies|KAKENHI by the Japan Society for the Promotion of Science [16H05970]; Swedish Energy Agency [P40119-1]

Available from: 2019-04-18 Created: 2019-04-18 Last updated: 2019-05-10

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The full text will be freely available from 2020-03-26 11:28
Available from 2020-03-26 11:28

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CiteExportLink to record
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