liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Au Nanoparticles as Gate Material for NOx Field Effect Capacitive Sensors
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Applied Physics . Linköping University, The Institute of Technology.
University of Bari.
University of Bari.
Show others and affiliations
2008 (English)In: Sensor letters, ISSN 1546-198X (print) 1546-1971 (online), Vol. 6, no 4, 577-584 p.Article in journal (Refereed) Published
Abstract [en]

Gold nanoparticles (Au-NPs) are electrochemically synthesized in the presence of tetra-alkylammonium stabilizers and used as active element in Field Effect capacitive gas sensors. Before use, the sensing area is treated by a relatively mild annealing procedure aimed to partially remove the organic stabilizer without loosing the nano-structured character of the particles. Both pristine and annealed materials have been subjected to a spectroscopic and morphological characterization (by means of UV-Vis, XPS, TEM, SEM techniques). Preliminary results on the application of AuNPs as gate material for NO, sensing are reported. The sensor is able to detect NO, with appreciable selectivity and low response towards the other tested gases (C3H6, CO, H-2, NH3).

Place, publisher, year, edition, pages
2008. Vol. 6, no 4, 577-584 p.
Keyword [en]
Gold Nanoparticle, FET, XPS, Gas Sensor
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-16140DOI: 10.1166/sl.2008.433OAI: oai:DiVA.org:liu-16140DiVA: diva2:133228
Available from: 2009-01-08 Created: 2009-01-07 Last updated: 2014-01-09
In thesis
1. Nanostructured materials for gas sensing applications
Open this publication in new window or tab >>Nanostructured materials for gas sensing applications
2011 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

In this Thesis I have investigated the use of nanostructured films as sensing and contact layers for field effect gas sensors in order to achieve high sensitivity, selectivity, and long term stability of the devices in corrosive environments at elevated temperatures. Electrochemically synthesized Pd and Au nanoparticles deposited as sensing layers on capacitive field effect devices were found to give a significant response to NOx with small, or no responses to H2, NH3, and C3H6. Pt nanoparticles incorporated in a TiC matrix are catalytically active, but the agglomeration and migration of the Pt particles towards the substrate surface reduces the activity of the sensing layer. Magnetron sputtered epitaxial films from the Ti-Si-C and the Ti-Ge-C systems were grown on 4H-SiC substrates in order to explore their potential as high temperature stable ohmic contact materials to SiC based field effect gas sensors. Ti3SiC2 thin films deposited on 4H-SiC substrates were found to yield ohmic contacts to n-type SiC after a high temperature rapid thermal anneal at 950 ºC. Investigations on the growth mode of Ti3SiC2 thin films with varying Si content on 4H-SiC substrates showed the growth to be lateral step-flow with the propagation of steps with a height as small as half a unit cell. The amount of Si present during deposition leads to differences in surface faceting of the films and Si-supersaturation conditions gives growth of Ti3SiC2 films with the presence of TiSi2 crystallites. Current-voltage measurements of the as-deposited Ti3GeC2 films indicate that this material is also a promising candidate for achieving long term stable contact layers to 4H-SiC for operation at elevated temperatures in corrosive environments. Further investigations into the Ti-Ge-C system showed that the previously unreported solid solutions of (Ti,V)2GeC, (Ti,V)3GeC2 and (Ti,V)4GeC3 can be synthesized, and it was found that the growth of these films is affected by the nature of the substrate.

Place, publisher, year, edition, pages
Linköping: Linköping University Electronic Press, 2011. 61 p.
Series
Linköping Studies in Science and Technology. Dissertations, ISSN 0345-7524 ; 1377
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-69641 (URN)9789173931403 (ISBN)
Public defence
2011-09-09, Planck, Fysikhuset, Campus Valla, Linköpings universitet, Linköping, 10:15 (English)
Opponent
Supervisors
Available from: 2011-07-08 Created: 2011-07-08 Last updated: 2017-12-14Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Ieva, ElianaBuchholt, KristinaLloyd Spetz, AnitaKäll, Per-Olov

Search in DiVA

By author/editor
Ieva, ElianaBuchholt, KristinaLloyd Spetz, AnitaKäll, Per-Olov
By organisation
Department of Physics, Chemistry and BiologyThe Institute of TechnologyApplied Physics Physical Chemistry
Natural Sciences

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 283 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf