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General rule for the energy of water-induced traps in organic semiconductors
Linköping University, Department of Physics, Chemistry and Biology, Complex Materials and Devices. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Science and Technology, Laboratory of Organic Electronics. Linköping University, Department of Science and Technology, Media and Information Technology. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Complex Materials and Devices. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Complex Materials and Devices. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0002-7104-7127
2019 (English)In: Nature Materials, ISSN 1476-1122, E-ISSN 1476-4660, Vol. 18, no 6, p. 588-+Article in journal (Refereed) Published
Abstract [en]

Charge carrier traps are generally highly detrimental for the performance of semiconductor devices. Unlike the situation for inorganic semiconductors, detailed knowledge about the characteristics and causes of traps in organic semiconductors is still very limited. Here, we accurately determine hole and electron trap energies for a wide range of organic semiconductors in thin-film form. We find that electron and hole trap energies follow a similar empirical rule and lie similar to 0.3-0.4 eV above the highest occupied molecular orbital and below the lowest unoccupied molecular orbital, respectively. Combining experimental and theoretical methods, the origin of the traps is shown to be a dielectric effect of water penetrating nanovoids in the organic semiconductor thin film. We also propose a solvent-annealing method to remove water-related traps from the materials investigated, irrespective of their energy levels. These findings represent a step towards the realization of trap-free organic semiconductor thin films.

Place, publisher, year, edition, pages
NATURE PUBLISHING GROUP , 2019. Vol. 18, no 6, p. 588-+
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-158312DOI: 10.1038/s41563-019-0347-yISI: 000468511800017PubMedID: 31011215OAI: oai:DiVA.org:liu-158312DiVA, id: diva2:1333945
Note

Funding Agencies|Chinese Scholarship Council (CSC); SeRC (Swedish e-Science Research Center)

Available from: 2019-07-02 Created: 2019-07-02 Last updated: 2019-10-16

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