Ultraviolet Detectors Based on ZnO: N Thin Films with Different Contact Structures
2008 (English)In: Acta Physica Polonica. A, ISSN 0587-4246, Vol. 114, no 5, 1123-1129 p.Article in journal (Refereed) Published
Al/ZnO:N/Al and Ni/ZnO:N/Al diode photodetectors fabricated by do magnetron sputtering of ZnO:N films on p-Si substrates are studied. The photocurrent-to-dark current ratio equal to 250 at lambda = 390 nm and the time constant of photoresponse about 10 mu s for Al/ZnO:N/Al structures with 4 mu m interdigital spacing was achieved. The Ni/ZnO:N/Al diode structure has the rectification ratio approximate to 10(2) at bias 1 V, the maximal responsivity about 0.1 A/W is observed at 365 nm, and the measured time constant of photoresponse is about 100 ns.
Place, publisher, year, edition, pages
2008. Vol. 114, no 5, 1123-1129 p.
IdentifiersURN: urn:nbn:se:liu:diva-16191OAI: oai:DiVA.org:liu-16191DiVA: diva2:133402