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Ultraviolet Detectors Based on ZnO: N Thin Films with Different Contact Structures
NASU, Ukraine.
NASU, Ukraine.
NASU, Ukraine.
NASU, Ukraine.
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2008 (English)In: Acta Physica Polonica. A, ISSN 0587-4246, Vol. 114, no 5, 1123-1129 p.Article in journal (Refereed) Published
Abstract [en]

Al/ZnO:N/Al and Ni/ZnO:N/Al diode photodetectors fabricated by do magnetron sputtering of ZnO:N films on p-Si substrates are studied. The photocurrent-to-dark current ratio equal to 250 at lambda = 390 nm and the time constant of photoresponse about 10 mu s for Al/ZnO:N/Al structures with 4 mu m interdigital spacing was achieved. The Ni/ZnO:N/Al diode structure has the rectification ratio approximate to 10(2) at bias 1 V, the maximal responsivity about 0.1 A/W is observed at 365 nm, and the measured time constant of photoresponse is about 100 ns.

Place, publisher, year, edition, pages
2008. Vol. 114, no 5, 1123-1129 p.
National Category
Natural Sciences
URN: urn:nbn:se:liu:diva-16191OAI: diva2:133402
Available from: 2009-01-09 Created: 2009-01-09 Last updated: 2009-04-30

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Khranovskyy, VolodymyrYakimova , Rositsa
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Materials Science The Institute of Technology
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