liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Seed-Layer-Free Atomic Layer Deposition of Highly Uniform Al2O3 Thin Films onto Monolayer Epitaxial Graphene on Silicon Carbide
CNR, Italy.
CNR, Italy.
CNR, Italy.
CNR, Italy.
Show others and affiliations
2019 (English)In: Advanced Materials Interfaces, ISSN 2196-7350, Vol. 6, no 10, article id 1900097Article in journal (Refereed) Published
Abstract [en]

Atomic layer deposition (ALD) is the method of choice to obtain uniform insulating films on graphene for device applications. Owing to the lack of out-of-plane bonds in the sp(2) lattice of graphene, nucleation of ALD layers is typically promoted by functionalization treatments or predeposition of a seed layer, which, in turn, can adversely affect graphene electrical properties. Hence, ALD of dielectrics on graphene without prefunctionalization and seed layers would be highly desirable. In this work, uniform Al2O3 films are obtained by seed-layer-free thermal ALD at 250 degrees C on highly homogeneous monolayer (1L) epitaxial graphene (EG) (amp;gt;98% 1L coverage) grown on on-axis 4H-SiC(0001). The enhanced nucleation behavior on 1L graphene is not related to the SiC substrate, but it is peculiar of the EG/SiC interface. Ab initio calculations show an enhanced adsorption energy for water molecules on highly n-type doped 1L graphene, indicating the high doping of EG induced by the underlying buffer layer as the origin of the excellent Al2O3 nucleation. Nanoscale current mapping by conductive atomic force microscopy shows excellent insulating properties of the Al2O3 thin films on 1L EG, with a breakdown field amp;gt; 8 MV cm(-1). These results will have important impact in graphene device technology.

Place, publisher, year, edition, pages
WILEY , 2019. Vol. 6, no 10, article id 1900097
Keywords [en]
atomic force microscopy; atomic layer deposition; epitaxial graphene; SiC
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-158568DOI: 10.1002/admi.201900097ISI: 000468810200002OAI: oai:DiVA.org:liu-158568DiVA, id: diva2:1334875
Note

Funding Agencies|FlagERA project GraNitE (Ministero dellIstruzione, Universita e Ricerca (MIUR)) [0001411]; FlagERA project GRIFONE; Hungarian Scientific Research Fund (OTKA) [118914]; "Material Science 2015" (RMA)-program of the Swedish Foundation for Strategic Research (SSF); "Generic Methods and Tools for Production 2014" (GMT)-program of the Swedish Foundation for Strategic Research (SSF)

Available from: 2019-07-03 Created: 2019-07-03 Last updated: 2019-10-16

Open Access in DiVA

fulltext(1877 kB)207 downloads
File information
File name FULLTEXT01.pdfFile size 1877 kBChecksum SHA-512
dcd6fb6d40562a070f723806b5c472ae0f8dd4e7bcca2d53d29af085561e2389d60a6f5dc86442d606e473fbbe67cea3a0798e15773278e0cb23a5a2bd0845a5
Type fulltextMimetype application/pdf

Other links

Publisher's full text

Search in DiVA

By author/editor
Ivanov, Ivan GueorguievYakimova, Rositsa
By organisation
Semiconductor MaterialsFaculty of Science & Engineering
In the same journal
Advanced Materials Interfaces
Condensed Matter Physics

Search outside of DiVA

GoogleGoogle Scholar
Total: 207 downloads
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 51 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf