liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Dielectric function tensor (1.5 eV to 9.0 eV), anisotropy, and band to band transitions of monoclinic -(AlxGa1-x)(2)O-3 (x 0.21) films
Univ Nebraska Lincoln, NE 68588 USA.
Univ Nebraska Lincoln, NE 68588 USA.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
Show others and affiliations
2019 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 114, no 23, article id 231901Article in journal (Refereed) Published
Abstract [en]

A set of monoclinic -(AlxGa1-x)(2)O-3 films coherently grown by plasma-assisted molecular beam epitaxy onto (010)-oriented -Ga2O3 substrates for compositions x0.21 is investigated by generalized spectroscopic ellipsometry at room temperature in the spectral range of 1.5eV-9.0eV. We present the composition dependence of the excitonic and band to band transition energy parameters using a previously described eigendielectric summation approach for -Ga2O3 from the study by Mock et al. All energies shift to a shorter wavelength with the increasing Al content in accordance with the much larger fundamental band to band transition energies of Al2O3 regardless of crystal symmetry. The observed increase in the lowest band to band transition energy is in excellent agreement with recent theoretical predictions. The most important observation is that charge confinement in heterostructures will strongly depend on the growth condition due to the strongly anisotropic properties of the band to band transitions.

Place, publisher, year, edition, pages
AMER INST PHYSICS , 2019. Vol. 114, no 23, article id 231901
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-158877DOI: 10.1063/1.5097780ISI: 000471696100035OAI: oai:DiVA.org:liu-158877DiVA, id: diva2:1337588
Note

Funding Agencies|National Science Foundation [DMR 1808715]; Air Force Office of Scientific Research [FA9550-18-1-0360]; Nebraska Materials Research Science and Engineering Center [DMR 1420645]; Swedish Energy Agency [P45396-1]; Swedish Research Council VR Award [2016-00889]; Swedish Foundation for Strategic Research Grant [FL12-0181, RIF14-055, EM16-0024]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University, Faculty Grant SFO Mat LiU [2009-00971]; University of Nebraska Foundation; J. A. Woollam Foundation; AFOSR [FA9550-18-1-0059, FA9550-18-1-0479]; DTRA [HDTRA 11710034]

Available from: 2019-07-16 Created: 2019-07-16 Last updated: 2019-07-16

Open Access in DiVA

No full text in DiVA

Other links

Publisher's full text

Search in DiVA

By author/editor
Mock, AlyssaDarakchieva, VanyaSchubert, Mathias
By organisation
Semiconductor MaterialsFaculty of Science & Engineering
In the same journal
Applied Physics Letters
Condensed Matter Physics

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 21 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf