Reversed quantum-confined Stark effect and an asymmetric band alignment observed for type-II Si∕Ge quantum dots
2005 (English)In: Physical Review B, ISSN 1098-0121, Vol. 71, no 11, 113301- p.Article in journal (Refereed) Published
We report on the quantum-confined Stark effect for spatially indirect transitions in Stranski-Krastanov grown type-II Si∕Ge quantum dots. A linear blueshift of the spatially indirect transition is observed at increasing electric field in contrast to the commonly observed redshift for type-I transitions. A shift of the emission-peak position and different quenching rates of the photoluminescence for p-i-n and n-i-p diodes at increased electric field and temperature indicate a deeper notch potential for electrons above the dot than below due to a strain-induced asymmetry in the band alignment.
Place, publisher, year, edition, pages
2005. Vol. 71, no 11, 113301- p.
IdentifiersURN: urn:nbn:se:liu:diva-16331DOI: 10.1103/PhysRevB.71.113301OAI: oai:DiVA.org:liu-16331DiVA: diva2:133870
Original Publication: Mats Larsson, Per-Olof Holtz, Anders Elfving, Göran Hansson and Wei-Xin Ni, Reversed quantum-confined Stark effect and an asymmetric band alignment observed for type-II Si∕Ge quantum dots, 2005, Physical Review B, (71), 113301. http://dx.doi.org/10.1103/PhysRevB.71.113301 Copyright: American Physical Society http://www.aps.org/2009-01-152009-01-152012-12-11Bibliographically approved