Effective tuning of the charge state of a single InAs/GaAs quantum dot by an external magnetic field
2008 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 78, no 7, 075306- p.Article in journal (Refereed) Published
A microphotoluminescence study of single InAs/GaAs quantum dots (QDs) in the presence of an applied external magnetic field is presented. Attention is focused on the redistribution between the spectral lines of a single QD observed at increasing magnetic field parallel to the growth direction (Faraday geometry). The redistribution effect is explained by considering the electron drift velocity in the QD plane that affects the probability for capture into the QD. In contrast, no redistribution is observed when applying the magnetic field perpendicular to the growth direction (Voigt geometry).
Place, publisher, year, edition, pages
2008. Vol. 78, no 7, 075306- p.
National CategoryNatural Sciences
IdentifiersURN: urn:nbn:se:liu:diva-16333DOI: 10.1103/PhysRevB.78.075306OAI: oai:DiVA.org:liu-16333DiVA: diva2:133883
Original Publication: Evgenii Moskalenko, Andréas Larsson, Mats Larsson, Per-Olof Holtz, W. V. Schoenfeld and P. M. Petroff, Effective tuning of the charge state of a single InAs/GaAs quantum dot by an external magnetic field, 2008, Physical Review B Condensed Matter, (78), 075306. http://dx.doi.org/10.1103/PhysRevB.78.075306 Copyright: American Physical Society http://www.aps.org/2009-01-152009-01-152013-05-07Bibliographically approved