Carrier transport in self-organized InAs/GaAs quantum-dot structures studied by single-dot spectroscopy
2006 (English)In: Physical Review B, ISSN 1098-0121 , Vol. 73, no 15Article in journal (Refereed) Published
A microphotoluminescence study of single InAs/GaAs quantum dots subjected to a lateral external electric field gives insight into carrier transport and capture processes into Stranski-Krastanov-grown quantum dots. The results obtained on the excitons in a single dot demonstrate a considerable luminescence intensity enhancement of the dot as well as a charge redistribution when an electric field is applied. The charge reconfiguration is evidenced by the transition from a predominantly negatively charged to a neutral charge state of the exciton. The model proposed to explain the charge redistribution is based on an effective hole localization at the potential fluctuations of the wetting layer.
Place, publisher, year, edition, pages
2006. Vol. 73, no 15
indium compounds, gallium arsenide, III-V semiconductors, semiconductor quantum dots, self-assembly, photoluminescence, excitons
IdentifiersURN: urn:nbn:se:liu:diva-16334DOI: 10.1103/PhysRevB.73.155336OAI: oai:DiVA.org:liu-16334DiVA: diva2:133886
Evgenii Moskalenko, Mats Larsson, Per-Olof Holtz, W. V. Schoenfeld and P. M. Petroff, Carrier transport in self-organized InAs/GaAs quantum-dot structures studied by single-dot spectroscopy, 2006, Physical Review B, (73), 155336.
Copyright: American Physical Society